Toshiba Launches 3rd-Gen 650V SiC MOSFETs in TOLL Package for Higher Industrial Power Density

Toshiba Electronic Devices & Storage Corporation has introduced three 650V silicon carbide (SiC) MOSFETs—TW027U65C, TW048U65C, and TW083U65C—in a surface-mount TOLL package. These third-generation devices significantly reduce size while improving switching performance,

targeting industrial power supplies, photovoltaic inverters, and other applications demanding high efficiency and power density.

Compared to through-hole packages like TO-247, the TOLL package reduces device volume by over 80%, enhancing system power density. Its lower parasitic impedance and 4-pin Kelvin connection contribute to reduced switching losses. For example, the TW048U65C achieves approximately 55% lower turn-on loss and 25% lower turn-off loss compared to Toshiba's existing products, supporting higher energy efficiency in industrial equipment.

The new SiC MOSFETs are now available in volume production, offering a more compact and efficient semiconductor solution for high-power industrial applications.