ROHM Develops Protective Schottky Barrier Diode with Low VF and Low IR Characteristics

ROHM has successfully developed an innovative protective Schottky barrier diode 'RBE01VYM6AFH' that achieves an optimal balance between the typically trade-off characteristics of low forward voltage (VF) and low reverse current (IR). This product provides highly reliable protection for high-pixel image sensors used in ADAS cameras, industrial equipment, and security devices.

As image sensor pixel counts continue to increase, the photovoltage generated when power is shut off can potentially damage circuits. While using Schottky diodes with low VF characteristics for protection has been recognized as an effective solution, low IR characteristics are also required to prevent thermal runaway during operation. ROHM has overcome this traditional design challenge through innovative device restructuring, enabling the new product to achieve VF <300mV (IF=7.5mA) at -40°C and IR <20mA (VR=3V) at 125°C, effectively balancing both protection performance and operational stability.

The diode comes in a compact SOD-323HE package (2.5mm × 1.4mm), suitable for space-constrained applications like automotive cameras and industrial equipment. It complies with the AEC-Q101 automotive reliability standard, making it an ideal protection solution for next-generation electronic devices requiring high reliability.